In-situ Microscopy of Successive Ferroelectric-Antiferroelectric Transition in Antiferroelectric Oxides

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Poster & Flash Talk
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Poster Session Two
Professor Yin-Lian ZHU (1)
1. Songshan Lake Materials Laboratory

HAADF STEM Imaging; In-Situ TEM; Atomic Mapping; Oxides; perovskite

Abstract text

Antiferroelectrics showing reversible transitions between antiparallel and parallel polarity are promising in cutting-edge electronic and electrical power applications. Underlying the phase transition mechanism at an atomic level will deepen the understanding of interaction and facilitate the relevant device design. By HAADF-STEM imaging combined with in-situ electron beam irradiations, we elucidate the phase transition pathway along with the underlying lattice-by-lattice details in PbZrO3 thin films prepared on (001) SrTiO3 substrates by PLD techniques. A new ferrielectric-like dipole configuration is identified in the films with both angular and amplitude modulations, which plays a role as a precursor for the subsequent antiferroelectric to ferroelectric transition. The phase transition pathway can be driven either by phase boundary or by domain wall. Since PbZrO3 is a typical antiferroelectric material found in the middle of last century [1], the investigation on it with advanced TEM techniques will bring new knowledge to this system.


[1] E. Sawaguchi, H. Maniwa, H. Hishino,   Phys.  Rev.  83, 1078 (1951).