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  • Magnetic field dependence of the tunneling density of states in the type II Weyl semimetal WTe2
  • Magnetic field dependence of the tunneling density of states in the type II Weyl semimetal WTe2

    Abstract number
    361
    Presentation Form
    Poster Flash Talk + Poster
    Corresponding Email
    [email protected]
    Session
    Stream 5: Late Breaking
    Authors
    Mr Francisco Martín Vega (4, 7), Miss Raquel Sánchez-Barquilla (4, 7), Dr Edwin Herrera (4, 7), Professor Hermann Suderow (4, 7), Dr Isabel Guillamón (4, 7), Dr José J. Baldoví (5), Dr Masayuki Ochi (2), Professor Ryotaro Arita (3), Dr Na Hyun Jo (1, 6), Dr Sergey Bud'ko (1, 6), Professor Paul Candfield (1, 6)
    Affiliations
    1. Ames Laboratory
    2. Osaka University
    3. RIKEN Center for Emergent Matter Science
    4. Universidad Autónoma de Madrid
    5. Universidad de valencia
    6. Department of Physics and Astronomy
    7. Unidad asociada (UAM/CSIC)
    Keywords

    Topological, Weyl semimetal, STM

    Abstract text

    We present STM measurements at very high magnetic fields in the type II Weyl semimetal WTe2.  WTe2 presents a huge nonsaturating magnetoresistance (6 orders of magnitude between 0 T and 14 T at 4.2 K [1,2]). To understand the origin of this effect, which has been put in relation to possible topological properties in the bandstructure, we have performed detailed atomic scale tunneling density of states measurements as a function of the magnetic field. We follow topography and tunneling density of states as a function of the magnetic field up to 14 T. We show that the overall bandstructure remains magnetic field independent, apart the formation of Landau Levels [3,4]. We notice a phase difference in these oscillations that follows the atomic periodicity. This spatial modulation in the phase can be attributed to a surface potential.

    References

    [1] M. N. Ali et al.,Nature, 514 205-208 (2014)

    [2] Y. Wu et al. Phys. Rev. Lett., 115, 166602 (2015)

    [3] N. H. Jo et al., Proceedings of the National Academy of Science., 116.51, 25524-25529 (2019)

    [4] Z. Zhu et al., Phys. Rev. Lett., 114, 176601 (2015)